Synthesis and Characterization of Bismuth Telluride (Bi0.48Sb1.52Te3) Single Crystals

Jintana Laopaiboon, Somkid Pencharee, Chutima Eamchotchawalit


The objectives of this research are to study the effect of the crystal growth rate ofBi0.48Sb1.52Te3 prepared by Bridgman method on its thermoelectric properties. Solid solutionswith the composition of Bi0.48Sb1.52Te3 have been grown using the crystal growth rates of 3.6,6.0 and 12.0 mm/hr, respectively. The thermoelectric characterizations of samples was cutalong the ingots of these solid solutions are carried out. The crystal growth rate andtemperature measurement are responsible for thermoelectric properties. By increasing thetemperature measurement, the figure of merit increased. The figure of merit decrease withincreasing crystal growth rate. The crystal growth rate of 3.6 mm/hr exhibited a large figureof merit equal to 5.476 x 10-3 K-1 at 348 K. The best method may be used to fabricatethermoelectric cooling and power generator devices.

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